LED module and LED lamp having the LED module

ABSTRACT

An LED module includes a first dielectric layer, and a first patterned conductive layer having first, second, and third die-bonding pads. Each die-bonding pad includes a pad body having a die-bonding area, and an extension extended from the pad body. The extension of the first die-bonding pad extends in proximity to the die-bonding area of the second die-bonding pad. The extension of the second die-bonding pad extends in proximity to the die-bonding area of the third die-bonding pad. A second dielectric layer disposed on the first patterned conductive layer includes three dielectric members corresponding respectively to the die-bonding pads of the first patterned conductive layer. Each dielectric member includes a chip-receiving hole exposing the die-bonding area of a respective die-bonding pad for attachment of an LED chip thereto, and a wire-passage hole spaced apart from the chip-receiving hole to expose partially the first patterned conductive layer for bonding a wire.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority of Chinese Application No.201010170011.6, filed on May 4, 2010.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a light emitting diode (LED) module, moreparticularly to a light emitting diode (LED) module with a chip-on-board(COB) structure and including at least two LED chips and a lightemitting diode (LED) lamp having the LED module.

2. Description of the Related Art

Technological progress in producing light emitting diode (LED) chips hasresulted in an increase in the power of the LED chips, and this, inturn, has resulted in an increase in the resulting generated heat. As aconsequence, the heat-dissipating effect of an LED package structurebecomes an important factor that affects the quality of an LED product.Hence, there are continuous efforts to enhance the heat-dissipatingeffect of LED package structures. Currently, a package body having aplurality of LED chips is connected to a metal core printed circuitboard (MCPCB) by soldering to effect heat-dissipation. Theheat-dissipation path thereof includes a plurality of thermal resistantlayers that may reduce the effect of heat-dissipation.

Further, the electrode structure of the current LED chip may be verticalor horizontal in type, and the colors emitted by the LED chips aredifferent. There is an ongoing need to enable an increase in flexibilityin selecting the types of LED chips in an LED module as well as anincrease in a design space for the circuit (series or parallel) betweenthe LED chips within the same module to facilitate later use.

SUMMARY OF THE INVENTION

Therefore, an object of the present invention is to provide a multi-chipLED module that can simultaneously use horizontal and vertical types ofchips, that has flexibility for circuit design, and that can enhance theeffect of heat dissipation.

According to this invention, an LED module comprises a first dielectriclayer, a first patterned conductive layer, and a second dielectriclayer. The first patterned conductive layer is disposed on the firstdielectric layer, and includes first, second, and third die-bondingpads. Each die-bonding pad includes a pad body, and an extensionextended from the pad body. The pad body has a die-bonding area. Theextension of the first die-bonding pad extends in proximity to thedie-bonding area of the second die-bonding pad, and the extension of thesecond die-bonding pad extends in proximity to the die-bonding area ofthe third die-bonding pad. The second dielectric layer is disposed onthe first patterned conductive layer, and includes three dielectricmembers corresponding respectively to the die-bonding pads of the firstpatterned conductive layer. Each dielectric member includes achip-receiving hole and a wire-passage hole. The chip-receiving holeexposes the die-bonding area of a respective die-bonding pad forattachment of an LED chip thereto. The wire-passage hole is spaced apartfrom the chip-receiving hole to expose partially the first patternedconductive layer for bonding a wire.

The efficiency of the LED module of the present invention resides in thefact that through the patterned conductive layer which has a pluralityof die-bonding pads, flexibility is provided with respect to the use ofthe circuit design and the chip type. Further, the dielectric layer andthe patterned conductive layer may respectively be a ceramic layer and acopper layer that are soldered to form a multi-layered structure. TheLED chip may be directly connected to the patterned conductive layer(Chip-on-Board) to thereby minimize the thermal resistant layers andenhance the effect of heat dissipation. Moreover, the LED module has achip-receiving hole and a surrounding structure or a ring structure, andcan simplify a package process.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features and advantages of the present invention will becomeapparent in the following detailed description of the preferredembodiments of the invention, with reference to the accompanyingdrawings, in which:

FIG. 1 is an exploded perspective view of an LED module according to thefirst preferred embodiment of the present invention;

FIG. 2 is a schematic top view of the first preferred embodiment in anassembled state;

FIG. 3 is a view similar to FIG. 2, but with LED chips and a seconddielectric layer removed for clarity's sake;

FIG. 4 is a fragmentary sectional view of the first preferred embodimenttaken along line IV-IV of FIG. 2;

FIG. 5 is a perspective view of a first variation of the first preferredembodiment;

FIG. 6 is a perspective view of a second variation of the firstpreferred embodiment;

FIG. 7 is a perspective view of a third variation of the first preferredembodiment;

FIG. 8 is an exploded perspective view of an LED module according to thesecond preferred embodiment of the present invention;

FIG. 9 is a perspective view of the second preferred embodiment in anassembled state;

FIG. 10 is a schematic top view of the second preferred embodiment, butwith LED chips and a second dielectric layer removed for clarity's sake;

FIG. 11 is a perspective view of a first variation of the secondpreferred embodiment;

FIG. 12 is a perspective view of a second variation of the secondpreferred embodiment;

FIG. 13 is a perspective view of a third variation of the secondpreferred embodiment;

FIG. 14 is a perspective view of a fourth variation of the secondpreferred embodiment;

FIG. 15 is a perspective view of a fifth variation of the secondpreferred embodiment;

FIG. 16 is a perspective view of a sixth variation of the secondpreferred embodiment;

FIG. 17 is an exploded perspective view of an LED module according tothe third preferred embodiment of the present invention;

FIG. 18 is a schematic top view of the third preferred embodiment in anassembled state;

FIG. 19 is a fragmentary sectional view of the third preferredembodiment taken along line X-X of FIG. 18;

FIG. 20 is a schematic top view of an LED module according to the fourthpreferred embodiment of the present invention; and

FIG. 21 is a partial exploded perspective view of an LED lamp accordingto the preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The above-mentioned and other technical contents, features, and effectsof this invention will be clearly presented from the following detaileddescription of five preferred embodiments in coordination with thereference drawings.

Before this invention is described in detail, it should be noted that,in the following description, similar elements are designated by thesame reference numerals.

Referring to FIGS. 1 to 3, an LED module 100 according to the firstpreferred embodiment of the present invention comprises a firstdielectric layer 1, a first patterned conductive layer 2, a seconddielectric layer 3, three LED chips 4, and a metallic layer 5 disposedbelow the first dielectric layer 1.

The first patterned conductive layer 2 is disposed on the firstdielectric layer 1, and includes three die-bonding pads 21, 22, 23arranged in a substantially triangular fashion. The arrangement is suchthat the first die-bonding pad 21 is located on the right side, thesecond die-bonding pad 22 is located on the left upper side, and thethird die-bonding pad 23 is located on the left lower side. The firstdie-bonding pad 21 includes a pad body 211, and an extension 212extended from the pad body 211. The pad body 211 has a die-bonding area213, and a first cutout 214 extending inwardly from a periphery of thepad body 211 toward the die-bonding area 213 thereof. The seconddie-bonding pad 22 includes a pad body 221, and an extension 222extended from the pad body 221. The pad body 221 has a die-bonding area223, and a first cutout 224 extending inwardly from a periphery of thepad body 221 toward the die-bonding area 223 thereof. The thirddie-bonding pad 23 includes a pad body 231, and an extension 232extended from the pad body 231. The pad body 231 has a die-bonding area233, and a first cutout 234 extending inwardly from a periphery of thepad body 231 toward the die-bonding area 233 thereof. The extension 212of the first die-bonding pad 21 extends into the first cutout 224 of thesecond die-bonding pad 22 in proximity to the die-bonding area 223thereof. The extension 222 of the second die-bonding pad 22 extends intothe first cutout 234 of the third die-bonding pad 23 in proximity to thedie-bonding area 233 thereof.

The first patterned conductive layer 2 further includes a conductive pad25 disposed on the first dielectric layer 1, and has a conductive body251, and an extension 252 extended from the conductive body 251 into thefirst cutout 214 of the first die-bonding pad 21 in proximity to thedie-bonding area 213 thereof. In this embodiment, the first patternedconductive layer 2 is formed by etching partially a metal layer suchthat each of the die-bonding pads 21, 22, 23 and the conductive pad 25are not in electrical contact with each other. Hence, a large area ofthe metal layer may be retained to enhance the effect of heatdissipation. A definite gap is formed between each of the extensions252, 212, 222 and a corresponding one of the first cutouts 214, 224, 234to prevent electrical connection therebetween.

FIG. 4 is a partial sectional view of the LED module 100 furtherincluding an encapsulant 61 made of fluorescent glue, and a lens 82.

With reference to FIGS. 1, 2, and 4, the second dielectric layer 3 isdisposed on the first patterned conductive layer 2, and includes threedielectric members 31 disposed respectively on the first to thirddie-bonding pads 21, 22, 23. Each dielectric member 31 includes achip-receiving structure 311, and a surrounding structure 312 spacedapart from and surrounding the chip-receiving structure 311. Thechip-receiving structure 311 defines a rectangular chip-receiving hole313 extending through the second dielectric layer 3 and exposing thedie-bonding area 213, 223, 233 of the respective die-bonding pad 21, 22,23 to receive one of the LED chips 4. The chip-receiving structure 311and the surrounding structure 312 cooperatively define therebetween awire-passage hole 314 that is spaced apart from the chip-receiving hole313 and that exposes partially the first patterned conductive layer 2for a wire bonding process. The wire-passage hole 314 in each dielectricmember 31 exposes a portion of the pad body 211, 221, 231 of therespective die-bonding pad 21, 22, 23 that is adjacent to thedie-bonding area 213, 223, 233 thereof and a portion of the extension252, 212, 222 of a corresponding one of the conductive pad 25 and thefirst and second die-bonding pads 21, 22 that is proximate to thedie-bonding area 213, 223, 233 of the corresponding one of the first tothird die-bonding pads 21, 22, 23. In this embodiment, thechip-receiving structure 311 is configured as a plate body having acircular outer periphery, and the surrounding structure 312 is annular.Hence, the wire-passage hole 314 defined by the surrounding structure312 and the chip-receiving structure 311, in this embodiment, iscircular. It should be noted that the shape of the wire-passage hole 314is not limited to being circular, and may be other geometric shapes,such as a triangle, a square, or a polygon.

Each LED chip 4 is attached to the die-bonding area 213, 223, 233 of therespective die-bonding pad 21, 22, 23 after passing through thechip-receiving hole 313 in the respective dielectric member 31, and islocated within the chip-receiving structure 311. The chip-receiving holestructure 311 of each dielectric member 31 and a respective one of thefirst to third die-bonding pads 21, 22, 23 cooperatively define areceiving groove for receiving one of the LED chips 4 and simultaneouslydefine an area for receiving the encapsulant 81. That is, theencapsulant 81 is located within the chip-receiving hole 311, and coversthe LED chip 4. The annular surrounding structure 312 can be used tofill a packaging resin, which can be formed into the lens 82 after beingcured. Further, the lens 82 may be preformed and then bonded to a topside of the surrounding structure 312 using glue. Moreover, the lens 82may also be disposed within the wire-passage hole 314, and a peripheralend of the lens 82 may abut against an inner side of the surroundingstructure 312 due to tension, so that subsequent bonding of wires willnot be affected.

Referring once again to FIGS. 2 and 3, each of the extensions 212, 222,252 of the first and second die-bonding pads 21, 22 and the conductivepad 25 has a constriction part 26 stacked below the surroundingstructure 312 of the corresponding dielectric member 31. The pad body211, 221, 231 of each of the first to third die-bonding pads 21, 22, 23further has a pair of retainers 216, 226, 236 projecting into twoopposite sides of the constriction part 26 of the extension 212, 222,252 of the corresponding one of the first and second die-bonding pads21, 22 and the conductive pad 25. Through coordination of each pair ofthe retainers 216, 226, 236 and the corresponding constriction part 26,during filling of the packaging resin, the packaging resin in an uncuredstate can be prevented from overflowing through two opposite sides ofthe corresponding extension 212, 222, or 252.

In this embodiment, each of the first and second dielectric layers 1, 3is made of a ceramic material, and each of the first patternedconductive layer 2 and the metallic layer 5 is made of copper. Themetallic layer 5, the first dielectric layer 1, the first patternedconductive layer 2, and the second dielectric layer 3 are directlyconnected to each other by heat treatment (e.g., soldering) to reducethermal resistant layers. Further, the LED chips 4 are directly attachedto the first patterned conductive layer 2 (Chip-on-Board). Heatgenerated by the LED chips 4 can be quickly dissipated through the firstpatterned conductive layer 2, the first dielectric layer 1, and themetallic layer 5, thereby enhancing the effect of heat dissipation. Themetallic layer 5, aside from increasing the speed of heat dissipation,can also facilitate installation of the LED module 100 on a subsequentapplied product using a reflow process. Alternatively, the metalliclayer 5 may be dispensed herewith, and will not affect the basicfunction of the LED module 100. Hence, through soldering of the ceramicand copper layers to form a multi-layer structure, a smooth die-bondingflat surface may be obtained, and the chip-receiving hole 313 forfilling of the fluorescent glue and the surrounding structure 312 forfilling of the packaging resin may be formed directly, therebysimplifying the packaging process.

The LED module 100 is very flexible with respect to the selective use ofhorizontal or vertical type of LED chips and with respect to the designof the circuit. Three implementations of the first preferred embodimentare shown in FIGS. 5 to 7. It should be noted that the variations in thecircuit are illustrated only with the first patterned conductive layer 2and the LED chips 4 thereafter. Further, the bottom electrode of avertical type LED chip is directly connected to the first patternedconductive layer 2, and the top electrode is connected electrically tothe first patterned conductive layer 2 by a wire-bonding process. Thetwo electrodes of a horizontal type LED chip are connected electricallyto the first patterned conductive layer 2 by a wire-bonding process.

With reference to FIG. 5, the LED chips 4 used in the firstimplementation of the first preferred embodiment are vertical type LEDchips which are connected electrically in series.

With reference to FIG. 6, the LED chips 4 used in the secondimplementation of the first preferred embodiment are horizontal type LEDchips which are connected electrically in series.

With reference to FIG. 7, the LED chips 4 used in the thirdimplementation of the first preferred embodiment are horizontal type LEDchips which are connected electrically in parallel.

Referring to FIGS. 8 to 10, an LED module 100′ according to the secondpreferred embodiment of the present invention is shown to be similar tothe first preferred embodiment. Particularly, the LED module 100′comprises a first dielectric layer 1, a first patterned conductive layer2, a second dielectric layer 3, and a metallic layer 5 disposed belowthe first dielectric layer 1. However, in this embodiment, the LEDmodule 100′ comprises four LED chips 4, the first patterned conductivelayer 2 includes four die-bonding pads 21, 22, 23, 24 and fourconductive pads 25, and the second dielectric layer 3 includes fourdielectric members 31 disposed respectively on the die-bonding pads 21,22, 23, 24.

The four die-bonding pads 21, 22, 23, 24 are arranged in a rectangularfashion on the first dielectric layer 1. The arrangement is such thatthe first die-bonding pad 21 is located on the right upper side, thesecond die-bonding pad 22 is located on the right lower side, the thirddie-bonding pad 23 is located on the left lower side, and the fourthdie-bonding pad 24 is located on the left upper side. The pad body 211,221, 231, 241 of each of the first to fourth die-bonding pads 21, 22,23, 24 further includes a second cutout 215, 225, 235, 245 extendinginwardly from the periphery of the respective pad body 211, 221, 231,241 toward the die-bonding area 213, 223, 233, 243 thereof and spacedapart from the first cutout 214, 224, 234, 244. The extension 232 of thethird die-bonding pad 23 extends into the first cutout 244 of the fourthdie-bonding pad 24 in proximity to the die-bonding area 243 thereof. Theextension 242 of the fourth die-bonding pad 24 extends into the firstcutout 214 of the first die-bonding pad 21 in proximity to thedie-bonding area 213 thereof.

The extension 252 of each conductive pad 25 extends into the secondcutout 215, 225, 235, 245 of a respective one of the first to fourthdie-bonding pads 21, 22, 23, 24 in proximity to the die-bonding area213, 223, 233, 243 thereof.

The structure of each dielectric member 31 is similar to that describedin the first preferred embodiment. Particularly, each dielectric member31 includes a chip-receiving structure 311, and a surrounding structure312 spaced apart from and surrounding the chip-receiving structure 311.The chip-receiving structure 311 of each dielectric member 31 defines arectangular chip-receiving hole 313 extending through the seconddielectric layer 3 and exposing the die-bonding area 213, 223, 233, 243of the respective die-bonding pad 21, 22, 23, 24. The wire-passage hole314 defined by the chip-receiving structure 311 and the surroundingstructure 312 of each dielectric member 31 is annular, and exposespartially the pad body 211, 221, 231, 241 of the respective die-bondingpad 21, 22, 23, 24, the extension 252 of one of the conductive pads 25,and the extension 212, 222, 232, 242 of the respective die-bonding pad21, 22, 23, 24.

Each LED chip 4 is attached to the die-bonding area 213, 223, 233, 243of the respective die-bonding pad 21, 22, 23, 24 after passing throughthe chip-receiving hole 313 in the respective dielectric member 31, andis located within the chip-receiving structure 311.

Each of the extensions 212, 222, 232, 242, 252 has a constriction part26. The constriction part 26 of one of the conductive pads 25 and theconstriction part 26 of the respective one of the first to fourthdie-bonding pads 21, 22, 23, 24 are stacked below the surroundingstructure 312 of the respective dielectric member 31. Each of the padbodies 211, 221, 231, 241 further has a pair of first retainers 216,226, 236, 246 projecting into the constriction part 26 of the extension212, 222, 232, 242 of the respective die-bonding pad 21, 22, 23, 24, anda pair of second retainers 216′, 226′, 236′, 246′ projecting into theconstriction part 26 of the extension 252 of the respective conductivepad 25.

Similarly, each of the first and second dielectric layers 1, 3 is madeof a ceramic material, and each of the first patterned conductive layer2 and the metallic layer 5 is made of copper. The metallic layer 5, thefirst dielectric layer 1, the first patterned conductive layer 2, andthe second dielectric layer 3 are directly connected to each other byheat treatment (e.g., soldering) to reduce thermal resistant layers.Further, the LED chips 4 are directly attached to the first patternedconductive layer 2 (Chip-on-Board). Heat generated by the LED chips 4can be quickly dissipated through the first patterned conductive layer2, the first dielectric layer 1, and the metallic layer 5, therebyenhancing the effect of heat dissipation. Similarly, the metallic layer5 may be optionally used. Moreover, the function of the dielectricmembers 31 and the function of each pair of the first and secondretainers 216, 226, 236, 246, 216′, 226′, 236′, 246′ with theconstriction part 26 of the extension 212, 222, 232, 242, 252 of thecorresponding one of the first to fourth die-bonding pads 21, 22, 23, 24and the conductive pads 25 are similar to that described in the firstpreferred embodiment.

The LED module 100′ is more flexible with respect to the selective useof horizontal or vertical type of LED chips and with respect to thedesign of the circuit, as compared to that of the first preferredembodiment. Six implementations of the second preferred embodiment areshown in FIGS. 11 to 16. To facilitate the description, the seconddielectric layer 3 is not shown in FIGS. 11 to 16, and the variations inthe circuit 4 are illustrated only with the first patterned conductivelayer 2 and the LED chips 4 thereafter. Similarly, the bottom electrodeof the vertical type LED chip is directly connected to the firstpatterned conductive layer 2, and the top electrode thereof is connectedelectrically to the first patterned conductive layer 2 by a wire-bondingprocess. The two electrodes of the horizontal type LED chip areconnected electrically to the first patterned conductive layer 2 by awire-bonding process.

With reference to FIG. 11, the LED chips 4 used in the firstimplementation of the second preferred embodiment are vertical type LEDchips which are connected electrically in series.

With reference to FIG. 12, the LED chips 4 used in the secondimplementation of the second preferred embodiment are horizontal typeLED chips which are connected electrically in series.

With reference to FIG. 13, the LED chips 4 used in the thirdimplementation of the second preferred embodiment are horizontal typeLED chips which are connected electrically in parallel.

With reference to FIG. 14, the LED chips 4 used in the fourthimplementation of the second preferred embodiment are vertical type LEDchips which are connected electrically in parallel.

With reference to FIG. 15, the LED chips 4 used in the fifthimplementation of the second preferred embodiment are vertical type LEDchips. Two of the LED chips 4 are connected electrically in series,while the other two of the LED chips 4 are connected electrically inparallel.

With reference to FIG. 16, the LED chips 4 used in the sixthimplementation of the second preferred embodiment are horizontal typeLED chips. Two of the LED chips 4 are connected electrically in series,while the other two of the LED chips 4 are connected electrically inparallel.

Referring to FIGS. 17 to 19, an LED module 100″ according to the thirdpreferred embodiment of the present invention is shown to be similar tothe first preferred embodiment. However, in this embodiment, the LEDmodule 100″ further comprises a second patterned conductive layer 6disposed on the second dielectric layer 3, and the dielectric members31′ of the second dielectric layer 3′ are connected integrally to eachother to form a one-piece second dielectric layer 3′.

The structure of the first patterned conductive layer 2′ is similar tothat described in the first preferred embodiment. However, in thisembodiment, the constriction part 26 of the extension 252, 212, 222 ofeach of the conductive pad 25 and the first and second die-bonding pads21, 22 and the pair of the retainers 216, 226, 236 of each die-bondingpad 21, 22, 23 shown in FIG. 3 are dispensed herewith.

Unlike the first preferred embodiment, the wire-passage hole 314′ ineach dielectric member 31′ exposes only a portion of the extension 252′,212′, 222′ of a corresponding one of the conductive pad 25′ and thefirst and second die-bonding pad 21′, 22′.

The second patterned conductive layer 6 includes three ring structures61 disposed on the second dielectric layer 3′ corresponding in positionto the dielectric members 31′ Each ring structure 61 surrounds thechip-receiving hole 313′ and the wire-passage hole 314′ in a respectivedielectric member 31′.

The LED chips 4 are attached respectively to the die-bonding areas 213′,223′, 233′ of the die-bonding pads 21′, 22′, 23′, and are disposedrespectively in the chip-receiving hole 313′ in the dielectric members31′.

Similarly, each of the first and second dielectric members 1, 3′ is madeof a ceramic material, and each of the first and second patternedconductive layers 2′, 6 and the metallic layer 5 is made of copper. Themetallic layer 5, the first dielectric layer 1, the first patternedconductive layer 2′, the second dielectric layer 3′, and the secondpatterned conductive layer 6 are directly connected to each other byheat treatment (e.g., soldering) to reduce thermal resistance layers.Further, the LED chips 4 are directly attached to the first patternedconductive layer 2′ (Chip-on-Board). Heat generated by the LED chips 4can be quickly dissipated through the first patterned conductive layer2′, the first dielectric layer 1, and the metallic layer 5, therebyenhancing the effect of heat dissipation. The metallic layer 5 isdisposed optionally. The function of the chip-receiving hole 313′ issimilar to that described for the chip-receiving hole 313 of the firstpreferred embodiment, and is used for filling of the fluorescent gluefor forming the encapsulant 81 (see FIG. 19) The ring structure 61 issimilar to the surrounding structure 312 of the first preferredembodiment, and is used for filling of a packaging resin for forming thelens 82 (see FIG. 19), or directly disposing a preformed lens 82 onto atop or inner side of the surrounding structure 312.

Referring back to FIG. 19, in this embodiment, the LED chips 4 may bevertical type LED chips which are connected electrically in series.Alternatively, each dielectric member 31′ may be further provided withanother wire-passage hole similar to the wire-passage hole 314′ shown inFIG. 17 for partial exposure of the pad body 211′, 221′, 231′ of therespective die-bonding pad 21′, 22′, 23′ to facilitate a wire-bondingprocess. Through such a provision, not only the vertical type LED chipscan be used in this embodiment, but also horizontal type LED chips or acombination of the vertical type and horizontal type LED chips may besuitably used in this embodiment.

Referring to FIG. 20, an LED module 200 according to the fourthpreferred embodiment of the present invention is shown to be similar tothe first preferred embodiment. However, in this embodiment, the firstpatterned conductive layer 2 includes two die-bonding pads 21, 22, andthe second dielectric layer 3 includes two dielectric members 31corresponding to the die-bonding pads 21, 22. That is, in thisembodiment, aside from dispensing with the third die-bonding pad and thecorresponding dielectric member, the structure of the LED module 200 issimilar to that described in the first preferred embodiment.

The aforesaid first to fourth preferred embodiments of the LED module100, 100′, 100″, 200 may be installed on an illuminating lamp. Tofacilitate the description, an illuminating lamp incorporating the LEDmodule 100 of the first preferred embodiment will be exemplified below.

Referring to FIG. 21, an LED lamp 700 according to the preferredembodiment of the present invention comprises a housing 7 and the LEDmodule 100. The housing 7 has a lamp base 71 and a transparent cover 72.The lamp base 71 is concaved, and cooperates with the cover 72 to definea receiving space 73. The LED module 100 is mounted on and is connectedelectrically to the lamp base 71, and is received within the receivingspace 73. The LED module 100 can be illuminated through connection ofthe lamp base 71 with an external power source. Light emitted by the LEDmodule 100 passes through the cover 72 and out of the housing 7.

From the aforesaid description, through the die-bonding pads 21, 22, 23,24, 21′, 22′, 23′ of the first patterned conductive layer 2, 2′,flexibility is provided with respect to the design of the circuit andthe type of chips to be used for the LED module 100, 100′ , 100″, 200 ofthe present invention. Further, through soldering of the ceramic andcopper layers to form a multi-layer structure, the LED chips 4 can bedirectly attached to the first patterned conductive layer 2, 2′(Chip-on-Board) to reduce thermal resistant layers and to enhance theeffect of heat dissipation. Moreover, through the presence of thechip-receiving hole 313, 313′ and the surrounding structure 312 or thering structure 61, the packaging process can be simplified. Hence, theobjects of the present invention can be realized.

While the present invention has been described in connection with whatare considered the most practical and preferred embodiments, it isunderstood that this invention is not limited to the disclosedembodiments but is intended to cover various arrangements includedwithin the spirit and scope of the broadest interpretations andequivalent arrangements.

1. An LED module, comprising: a first dielectric layer; a firstpatterned conductive layer disposed on said first dielectric layer, andcomprising a first die-bonding pad, a second die-bonding pad, and athird die-bonding pad, each of said die-bonding pads comprising a padbody, and an extension extended from said pad body, said pad body havinga die-bonding area, wherein said extension of said first die-bonding padextending in proximity to said die-bonding area of said seconddie-bonding pad, and said extension of said second die-bonding padextending in proximity to said die-bonding area of said thirddie-bonding pad; and a second dielectric layer disposed on said firstpatterned conductive layer and comprising three dielectric memberscorresponding respectively to said die-bonding pads of said firstpatterned conductive layer, each of said dielectric members comprising achip-receiving hole and a wire-passage hole, said chip-receiving holeexposing said die-bonding area of a respective said die-bonding pad forattachment of an LED chip thereto, and said wire-passage hole beingspaced apart from said chip-receiving hole to expose partially saidfirst patterned conductive layer for wire bonding.
 2. LED module ofclaim 1, wherein said first patterned conductive layer further comprisesa conductive pad, said conductive pad having a conductive body, and anextension extended from said conductive body, said extension of saidconductive pad extending in proximity to said die-bonding area of saidfirst die-bonding pad.
 3. The LED module of claim 2, wherein said padbody of each of said first, second, and third die-bonding pads furtherhas a first cutout, said extension of said first die-bonding padextending into said first cutout of said second die-bonding pad inproximity to said die-bonding area of said second die-bonding pad, saidextension of said second die-bonding pad extending into said firstcutout of said third die-bonding pad in proximity to said die-bondingarea of said third die-bonding pad, said extension of said conductivepad extending into said first cutout of said first die-bonding pad inproximity to said die-bonding area of said first die-bonding pad.
 4. TheLED module of claim 3, wherein said wire-passage hole of each of saiddielectric members partially exposes a corresponding one of saidextension of one of said first and second die-bonding pads and saidextension of said conductive pad that is proximate to a correspondingsaid die-bonding pad.
 5. The LED module of claim 4, wherein each of saiddielectric members of said second dielectric layer further comprises achip-receiving structure, and a surrounding structure spaced apart fromsaid chip-receiving structure, said chip-receiving hole being defined bysaid chip-receiving structure, said chip-receiving structure and saidsurrounding structure cooperatively defining said wire-passage hole,said wire-passage hole exposing partially said pad body of one ofcorresponding said first, second, and third die-bonding loads that isproximate to said die-bonding area thereof and corresponding one of saidextensions of one of said first and second die-bonding pads and saidextension of said conductive pad.
 6. The LED module of claim 5, whereinat least one of said extensions of said first and second die-bondingpads and said extension of said conductive pad has a constriction partstacked below said surrounding structure of a corresponding saiddielectric member, and at least one said pad body of each of said first,second, and third die-bonding pads further comprising a pair ofretainers projecting correspondingly toward said constriction part andextended into said first cutout of a corresponding said die-bonding pad.7. The LED module of claim 4, further comprising a second patternedconductive layer disposed on said second dielectric layer, said secondpatterned conductive layer comprising three ring structures disposed onsaid second dielectric layer corresponding in position to saiddielectric members, each of said ring structures surrounding saidchip-receiving hole and said wire-passage hole of each said dielectricmember and being provided for receiving a lens.
 8. The LED module ofclaim 1, wherein said first patterned conductive layer further comprisesa fourth die-bonding pad, said fourth die-bonding pad having a pad bodywith a die-bonding area, and an extension extended from said pad body ofsaid fourth die-bonding pad, said extension of said third die-bondingpad extending in proximity to said die-bonding area of said fourthdie-bonding pad, said extension of said fourth die-bonding pad extendingin proximity to said die-bonding area of said first die-bonding pad. 9.The LED module of claim 8, wherein said first patterned conductive layerfurther comprises four conductive pads corresponding respectively tosaid first to fourth die-bonding pads, each of said conductive padshaving a conductive body, and an extension extended from said conductivebody in proximity to said die-bonding area of a corresponding one ofsaid first to fourth die-bonding pads.
 10. The LED module of claim 9,wherein said pad body of each of said first to fourth die-bonding padsfurther has a first cutout and a second cutout, said extension of saidfirst die-bonding pad extending into said first cutout of said seconddie-bonding pad in proximity to said die-bonding area of said seconddie-bonding pad, said extension of said second die-bonding pad extendinginto said first cutout of said third die-bonding pad in proximity tosaid die-bonding area of said third die-bonding pad, said extension ofsaid third die-bonding pad extending into said first cutout of said fourdie-bonding pad in proximity to said die-bonding area of said fourdie-bonding pad, said extension of said fourth die-bonding pad extendinginto said first cutout of said first die-bonding pad in proximity tosaid die-bonding area of said first die-bonding pad, said extension ofone of said conductive pads extending into said second cutout of saidpad body of a respective one of said first to fourth die-bonding pads inproximity to said die-bonding area of the respective one of said firstto fourth die-bonding pads.
 11. The LED module of claim 10, wherein saidwire-passage hole of each of said dielectric members partially exposessaid extension of one of said first to fourth die-bonding pads and saidextension of one of said conductive pads.
 12. The LED module of claim11, wherein said second dielectric layer further comprises a fourthdielectric member corresponding to said fourth die-bonding pad, each ofsaid dielectric members comprising a chip-receiving structure, and asurrounding structure spaced apart from said chip-receiving structure,said chip-receiving hole being defined by said chip-receiving structure,said chip-receiving structure and said surrounding structurecooperatively defining said wire-passage hole, said wire-passage holeexposing partially said pad body of one of said first to fourthdie-bonding pads that is proximate to said die-bonding area thereof. 13.The LED module of claim 12, wherein at least one of said extensions ofsaid first to fourth die-bonding pads and said extensions of saidconductive pads has a constriction part stacked below said surroundingstructure of a corresponding said dielectric member, and at least onesaid pad body of each of said first to fourth die-bonding pads furthercomprising a pair of retainers projecting correspondingly toward saidconstriction part and extended into said first cutout of a correspondingsaid die-bonding pad.
 14. The LED module of claim 1, further comprisinga metallic layer disposed below said first dielectric layer.
 15. The LEDmodule of claim 14, wherein each of said first and second dielectriclayers is made of a ceramic material, and each of said first patternedconductive layer and said metallic layer is made of copper.
 16. An LEDlamp, comprising: a housing having a lamp base and a transparent covercooperatively defining a receiving space; and module as claimed in claim1, said LED module being mounted on and being connected electrically tosaid lamp base and being received within said receiving space.